Overview

Gold standard for Flash Toggle NAND memory device for your IP, SoC, and system-level design verification.

In production since 2011 for many production designs.

Cadence® Verification IP (VIP) for Toggle NAND is applicable to intellectual property (IP), system-on-chip (SoC), and system-level verification to provide verification of Flash NAND devices using toggle mode DDR 2.0 and above. The VIP for Toggle NAND is compatible with the industry-standard Universal Verification Methodology (UVM), runs on all leading simulators, and leverages the industry-standard Cadence Memory Model core architecture, interface, and use model.

Supported specification: toggle NAND DDR 2.0 Single-Level-Cell (SLC) and Multi-Level-Cell (MLC) devices as well as Toggle NAND DDR 3.0/4.0 Single-Level-Cell (SLC), Multi-Level-Cell, and Triple-Level-Cell (TLC) devices from Hynix, Samsung, Toshiba, and SanDisk.

Toggle NAND diagram

Product Highlights

  • Hundreds of protocol and timing checkers to easily catch design bugs
  • Hundreds of predefined configurations based on specific memory vendors' part numbers, datasheets, or generic JEDEC definitions available on ememory.com
  • Transaction and memory callbacks for all protocol, model states, and device memory events
  • Error injection capability through user modification of transaction contents (Below Version 2.0)
  • Packet tracker creation for easy debugging (Below Version 2.0)
  • Support testbench language interfaces for SystemVerilog, UVM
  • Ability to dynamically change configuration parameters

Key Features

The following table describes key features from the specifications that are implemented in the VIP:

Feature Name

Description

Speed
  • Up to 200MHz or 400Mbps per DQ pin
  • Up to 600MHz or 1200Mbps per DQ pin (Version 3.0/4.0)

Bits per Cell
  • Single-Level-Cell (SLC – 1-bit per cell) and Multi-Level-Cell (MLC – 2-bits per cell) devices support
  • SLC, MLC and Triple-Level-Cell (TLC – 3-bits per cell) devices support (Version 3.0/4.0)
Memory Sizes
  • 64Gb, 128Gb, 256Gb, and 512Gb

Configurability
  • Page size in number of bytes
  • Number of pages per block
  • Number of blocks per Plane/LUN (die/stack)
  • Number of Planes/LUNs per target
  • Number of targets per device

Commands
  • Software Reset
  • Read ID
  • Read Status
  • Read LUN status
  • ODT turn on and off

Operations
  • Multi-Plane and Interleaved operations for Read, Cache Read, Program, and Erase Operation
  • Multi-LUN Operations for simultaneous Read, Program, and Erase operations

Multiple Die
  • Supports Multiple Die with shared Chip Select signal

Signals
  • Differential signals support for Data Strobe Signal and Read Enable Signal

LUN Features
  • Supports LUN Set and Get Features to set NAND device in certain modes

Simulation Test Suite

MM has a rich test suite of scenarios for easy MM evaluation and deployment.

Please contact us for further information.

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