Overview

The Cadence High-Bandwidth Memory generation 2/2E PHY (HBM2E/2 PHY) is silicon-proven and is available in four process nodes: PHYs, achieving breakthrough performance, low energy per bit, and low area relative to the data bandwidth. It is engineered to quickly and easily integrate into SoCs and is verified as part of a complete memory subsystem solution. The HBM2E/2 PHY IP is an ideal solution for artificial intelligence (AI), high-performance computing (HPC), and image processing applications.

Key Benefits

Proven

Silicon characterization reports available

Low Latency

For data-intensive applications

High Performance

Highest performance HBM2E at 3.6Gbps. Interposer optimized for best signal integrity.

Low Power and Area

Low power control: advanced low power modes

Features

PHY

  • Advanced clocking architecture minimizes clock jitter
  • DFI PHY Independent Mode for initialization and training
  • IEEE 1500 interface, Memory BIST feature, and loop-back function
  • Designed for optimized interposer routing
  • Pin programmable support for lane repair

Controller

  • High-performance command queue placement and command execution selection
  • Optimized throughput of unique pseudo-channel interleaving
  • Lowest latency for data-intensive applications
  • Low-power control and advanced low-power modes with power-down and self-refresh
  • Memory controller interface is based on DFI 5.0
  • DFI frequency ratio of 2:1
  • Memory BIST feature

Resources

Browse Recommened Resources

Related Products

DDR/LPDDR PHY and Controller
LPDDR PHY and Controller
GDDR6 PHY and Controller
HBM3